| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-based semiconductor laser having excellent cleavage planes, using a GaN wafer having a semipolar plane. <P>SOLUTION: Marking-off lines 51a are formed on an edge part EDGE1. In the edge part EDGE1, a top surface and a side surface form an acute angle. The marking-off lines 51a extend along a reference line LINE extending in the orthogonal direction to an m-axis. The marking-off lines 51a include grooves extending along the reference line LINE. The marking-off lines 51a are not formed on an edge part EDGE2. In the edge part EDGE2, a top surface and a side surface form an obtuse angle. The marking-off lines 51a are formed with a laser marking device, or the marking-off lines 51a are formed with a marking device using a marking needle or a diamond needle. <P>COPYRIGHT: (C)2012,JPO&INPIT |
