| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate which makes it possible to obtain a sufficient gettering effect in a semiconductor device manufacturing process. <P>SOLUTION: A semiconductor substrate 3 of the present invention comprises a substrate body 8 consisting of a semiconductor; an insulation layer 6 consisting of a silicon oxide film which is formed on the substrate body 8 and contains phosphor; and a semiconductor layer 7 provided on the insulation layer 6. Also, a semiconductor device of the present invention includes the semiconductor substrate 3 comprising the substrate body 8 consisting of a semiconductor, the insulation layer 6 consisting of a silicon oxide film which is formed on the substrate body 8 and contains phosphor, and the semiconductor layer 7 provided on the insulation layer 6; a gate insulation film provided on the semiconductor layer 7; a gate electrode provided on the gate insulation film; and an impurity diffusion region provided at a position inside the semiconductor layer 7 and self-aligned with the gate electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
