发明名称 |
MOSFET MODEL OUTPUT DEVICE AND OUTPUT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MOSFET model output device and output method that can prepare high precision MOSFET models into which effects of parasitic elements are appropriately incorporated. <P>SOLUTION: An MOSFET model output device comprises: a shape data input unit 101 that inputs shape data of a MOSFET; a parameter calculating unit 102 that calculates parameters of a parasitic element model to be added to the MOSFET model by utilizing the shape data; and a MOSFET model output unit 103 that prepares and outputs the MOSFET model to which the parasitic element model is added by utilizing the parameters of the parasitic element model; wherein the MOSFET model output unit adds to the MOSFET model a different parasitic element model depending on whether the MOSFET is an N-type MOSFET or a P-type MOSFET. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011253360(A) |
申请公布日期 |
2011.12.15 |
申请号 |
JP20100126900 |
申请日期 |
2010.06.02 |
申请人 |
TOSHIBA CORP |
发明人 |
YOSHITOMI SADAYUKI;FUJII FUMIE;WAKITA NAOKI;ITANO YUKA |
分类号 |
G06F17/50;H01L21/336;H01L21/82;H01L29/78 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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