| 摘要 |
<p>PURPOSE: A thin film transistor, an array substrate for a display apparatus using the TFT and manufacturing method of the same are provided to prevent damage to an active layer from over etch by forming a metal wire corresponding to the source region and the drain region of the active layer. CONSTITUTION: In a thin film transistor, an array substrate for a display apparatus using the TFT and manufacturing method of the same, a buffer layer(11), semiconductor layer, and a metal layer are formed in a substrate(10) successively. An active layer(112) includes a source region, a drain region, and a channel region. A metal wire(113) corresponds to the source region of the active layer and a drain region. A gate electrode(16) corresponds to the channel region of the active layer. A second insulating layer is laminated over the substrate having the gate electrode. A source electrode(18) and a drain electrode(19) are formed on the second insulating layer.</p> |
