ALUMINIUM NITRIDE SUBSTRATE FOR CIRCUIT BOARD AND PRODUCTION METHOD THEREOF

摘要

Disclosed is an aluminium nitride substrate for a circuit board that has aluminium crystals with an average particle diameter of 2-5 µm. Said aluminium nitride substrate, which has a thermal conductivity of at least 170 W/m·K, does not contain a dendritic inter-granular phase and has a breakdown voltage of at least 30 kV/mm at 400 ºC. Also provided is a production method for said aluminium nitride substrate wherein raw material containing aluminium nitride powder is pressed at a pressure up to 150 Pa and at up to 1500 ºC, the temperature is then increased to 1700-1900 ºC in a pressurised atmosphere of at least 0.4 MPa using a non-oxidising gas. After being held, a process is provided that cools the aluminium nitride to 1600 ºC at a rate of 10 ºC/minute.