SEMICONDUCTOR ELEMENT, OPTICAL SENSOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having a low dark current and light receiving sensitivity expanded on a long-wavelength side of near-infrared, an optical sensor device and a method for manufacturing a semiconductor element.

SOLUTION: A semiconductor element 50 includes: a type 2 (GaAsSb/InGaAs) MQW light receiving layer 3 located on an InP substrate 1; and an InP contact layer 5 located on the MQW. In the MQW, a GaAsSb composition x(%) is 44% or more, a film thickness z(nm) is 3 nm or more, and a relation of z(nm)≤-0.4x(atm.%)+24.6 is satisfied.

COPYRIGHT: (C)2012,JPO&INPIT