| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that suppresses a chromaticity shift. <P>SOLUTION: The semiconductor light-emitting device comprises a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a phosphor layer. The semiconductor layer includes a first principal surface, a second principal surface formed on the opposite side of the first principal surface, and a light-emitting layer. The first electrode is provided on a region of the second principal surface of the semiconductor layer, which has the light-emitting layer. The second electrode is provided outside the circumference of the light-emitting layer on the second principal surface of the semiconductor layer. The transparent layer is provided on the first principal surface of the semiconductor layer, and is transparent to light emitted from the light-emitting layer. The transparent layer has trenches provided outside the circumference of the light-emitting layer. The phosphor layer is provided in the trenches and on the transparent layer. The phosphor layer includes first phosphor particles that are provided in the trenches and are smaller than the trench width, and second phosphor particles that are provided on the transparent layer and are larger than the trench width and the first phosphor particles. <P>COPYRIGHT: (C)2012,JPO&INPIT |
