发明名称 |
Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting |
摘要 |
A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.
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申请公布号 |
US2011306210(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US20080070620 |
申请日期 |
2008.02.19 |
申请人 |
KASHKOUSH ISMAIL;NOLAN THOMAS;NEMETH DENNIS;NOVAK RICHARD |
发明人 |
KASHKOUSH ISMAIL;NOLAN THOMAS;NEMETH DENNIS;NOVAK RICHARD |
分类号 |
H01L21/306;H01L21/304 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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