发明名称 |
HIGH POWER AND HIGH TEMPERATURE SEMICONDUCTOR POWER DEVICES PROTECTED BY NON-UNIFORM BALLASTED SOURCES |
摘要 |
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount of ballasting resistances depending on a local thermal dissipation in each of the different areas. An exemplary embodiment has the transistor cells with a lower ballasting resistance formed near a peripheral area and the transistor cells having a higher ballasting resistance are formed near a bond pad area. Another exemplary embodiment comprises cells with a highest ballasting resistance formed in an area around a wire-bonding pad, the transistor cells having a lower resistance are formed underneath the wire-bonding pad connected to bonding wires for dissipating heat and the transistor cells having a lowest ballasting resistance are formed in an areas away from the bonding pad. |
申请公布号 |
US2011306175(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113199251 |
申请日期 |
2011.08.23 |
申请人 |
HEBERT FRANCOIS;BHALLA ANUP |
发明人 |
HEBERT FRANCOIS;BHALLA ANUP |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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