| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which an IGBT and a control circuit of the IGBT and the like are formed on a trench-isolated SOI substrate and which achieves a high breakdown voltage of the IGBT and improves turn-off characteristic of the IGBT. <P>SOLUTION: An SOI substrate is formed by the steps of forming an Ntype epitaxial layer 8 on a dummy semiconductor substrate 16, forming a trench 30 on the Ntype epitaxial layer 8, forming, on a side wall of the trench 30 and on a surface of the Ntype epitaxial layer 8, an Ntype buffer layer 7 and a P+type implanted collector layer 6, and coating a bottom surface of the trench 30 and a surface of the P+type implanted collector layer 6 with an implanted insulation film 5, coating the implanted insulation film 5 with a polysilicon film 3, bonding a Ptype semiconductor 1 via the polysilicon layer 3 and an insulation film 2, and removing the dummy semiconductor substrate 16. Thus, there is provided an SOI substrate provided with the implanted insulation layer 5 on the bottom surface of the trench 30, the P+type implanted collector layer 6, the Ntype buffer layer 7, the Ntype drift layer 8a and the like which are exposed on the substantially same level plane. The IGBT is formed on the SOI substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
