发明名称 |
BI-DIRECTIONAL SWITCH, ALTERNATING-CURRENT TWO-WIRE SWITCH, SWITCHING POWER SOURCE CIRCUIT, AND METHOD OF DRIVING BI-DIRECTIONAL SWITCH |
摘要 |
A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode. |
申请公布号 |
US2011305054(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113158934 |
申请日期 |
2011.06.13 |
申请人 |
YAMAGIWA HIROTO;HASHIZUME SHINGO;YANAGIHARA MANABU;IKOSHI AYANORI |
发明人 |
YAMAGIWA HIROTO;HASHIZUME SHINGO;YANAGIHARA MANABU;IKOSHI AYANORI |
分类号 |
H02M7/02;H03K17/687;H03K17/94 |
主分类号 |
H02M7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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