发明名称 |
VERTICAL SEMICONDUCTOR DEVICES |
摘要 |
A vertical semiconductor device and a method of making a vertical semiconductor device include a first semiconductor pattern formed on a substrate and a first gate structure formed on a sidewall of the first semiconductor pattern. A second semiconductor pattern is formed on the first semiconductor pattern. A plurality of insulating interlayer patterns is formed on sidewalls of the second semiconductor pattern. The insulating interlayer patterns are spaced apart from each other to define grooves between the insulating interlayer patterns. The plurality of second gate structures is disposed in the grooves, respectively. |
申请公布号 |
US2011303970(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113104377 |
申请日期 |
2011.05.10 |
申请人 |
KIM JIN-GYUN;LEE MYOUNG-BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-GYUN;LEE MYOUNG-BUM |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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