发明名称 |
SiC Crystals Having Spatially Uniform Doping Impurities |
摘要 |
A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule. |
申请公布号 |
US2011303884(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113217668 |
申请日期 |
2011.08.25 |
申请人 |
GUPTA AVINASH K.;SEMENAS EDWARD;ZWIEBACK ILYA;BARRETT DONOVAN L.;SOUZIS ANDREW N.;II-VI INCORPORATED |
发明人 |
GUPTA AVINASH K.;SEMENAS EDWARD;ZWIEBACK ILYA;BARRETT DONOVAN L.;SOUZIS ANDREW N. |
分类号 |
H01B1/04 |
主分类号 |
H01B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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