| 摘要 |
<p>An amplification-type solid state imaging device is provided with a pixel array formed from a plurality of pixels (10), and a control circuit. Each pixel (10) is provided with: a light receiving element (PD); a first amplification transistor (SF1) which amplifies and outputs a signal from the light receiving element (PD); capacities (CmR, CmS) which maintain the signal from the first amplification transistor (SF1); capacity-switch transistors (SwR, SwS) which control the input and output of the capacities (CmR, CmS); and a second amplification transistor (SF2) which amplifies and outputs the signal from the capacities (CmR, CmS). After sequentially turning on the capacity-switch transistors (SwR, SwS), and sequentially entering a signal from the first amplification transistor (SF1) into the capacities (CmR, CmS), the control circuit sequentially turns on the capacity-switch transistors (SwR, SwS), and sequentially reads out the signals entered in the capacities (CmR, CmS).</p> |
