发明名称 SEMICONDUCTOR ELECTRODE LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTROCHEMICAL DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor electrode layer composed of a metal oxide semiconductor porous layer, which can be manufactured by low temperature calcination and which has all of the performance as an electrode, the hardness and the adhesion to a support member and achieves a higher photoelectric conversion performance when it is used to form a dye-sensitized-type solar cell, and to provide a method of manufacturing the semiconductor electrode layer, and an electrochemical device having the semiconductor electrode layer. <P>SOLUTION: The method of manufacturing a semiconductor electrode layer includes: preparing a coating liquid by adding, to metal oxide semiconductor fine particles 2, a first compound yielding titanium oxide on hydrolysis, and a second compound consisting of a niobium (V) compound yielding oxide or hydroxide on hydrolysis, or phosphoric acid or phosphoric ester; and putting a layer of the coating liquid on a support member 5 followed by low temperature calcination. The semiconductor electrode layer 1 formed by the method has a first oxide layer 3 made of titanium oxide and binding between the metal oxide semiconductor fine particles 2 and between the fine particle 2 and support member 5, and is improved in its conductivity by niobium (V) oxide or a phosphorous (V) compound. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011253741(A) 申请公布日期 2011.12.15
申请号 JP20100127435 申请日期 2010.06.03
申请人 SONY CORP 发明人 IWATA RYOSUKE;MIZUNO MOTOHISA;KANEKO NAOTO
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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