发明名称 NONVOLATILE MEMORY, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
摘要 Provided is a nonvolatile memory 10 having a selective gate SG formed below a silicon layer 14, which is to be a channel region formed between a source region S and a drain region D of a transistor, through a gate insulating film 15 between the silicon layer and the selective gate, a floating gate FG formed on a part over the silicon layer 14 through a gate insulating film 16, and a control gate CG connected to the floating gate FG. The selective gate SG has one end overlapping the source region S through the gate insulating film 15, and the floating gate FG has one end overlapping the drain region D through the gate insulating film 16, and the other end separated from the source region S and overlapping the silicon layer 14 through the gate insulating film 16. Thus, a nonvolatile memory whose performance is not deteriorated even when it is formed on an insulating substrate having a low heat dissipating characteristic can be achieved.
申请公布号 US2011303964(A1) 申请公布日期 2011.12.15
申请号 US200913201584 申请日期 2009.12.14
申请人 UEDA NAOKI;YAMAUCHI YOSHIMITSU;SHARP KABUSHIKI KAISHA 发明人 UEDA NAOKI;YAMAUCHI YOSHIMITSU
分类号 H01L29/788;H01L21/336 主分类号 H01L29/788
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