发明名称 SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
摘要 Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
申请公布号 WO2011156705(A2) 申请公布日期 2011.12.15
申请号 WO2011US39970 申请日期 2011.06.10
申请人 ASM INTERNATIONAL N.V.;ASM AMERICA, INC.;HAUKKA, SUVI, P.;NISSKANEN, ANTTI;TUOMINEN, MARKO 发明人 HAUKKA, SUVI, P.;NISSKANEN, ANTTI;TUOMINEN, MARKO
分类号 H01L21/28;H01L21/20 主分类号 H01L21/28
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