SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
摘要
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
申请公布号
WO2011156705(A2)
申请公布日期
2011.12.15
申请号
WO2011US39970
申请日期
2011.06.10
申请人
ASM INTERNATIONAL N.V.;ASM AMERICA, INC.;HAUKKA, SUVI, P.;NISSKANEN, ANTTI;TUOMINEN, MARKO