发明名称 HIGH FIELD SENSITIVITY PLANAR HALL EFFECT SENSOR BASED ON FM/SPACER/AFM TRILAYER STRUCTURE
摘要 PURPOSE: A high magnetic field sensitivity planar hall effect sensor is provided to enhance magnetic field sensitivity and to reduce exchange coupling by enlarging an active current which passes through a ferromagnetic layer and forming a space layer thinly. CONSTITUTION: A high magnetic field sensitivity planar hall effect sensor is composed of an anti- ferroelectric material layer, a space layer, and a ferromagnetic layer. The ferromagnetic layer is composed of NiFe and NiCo. The space layer is composed of Cu, Ag, Au, Ru, and Ta. The anti- ferroelectric material layer is composed of IrMn and NiO. The high magnetic field sensitivity planar hall effect sensor appropriately has the exchange coupling of an appropriate size. The field sensitivity of the high magnetic field sensitivity planar hall effect sensor is high.
申请公布号 KR20110134594(A) 申请公布日期 2011.12.15
申请号 KR20100054238 申请日期 2010.06.09
申请人 THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) 发明人 KIM, CHEOL GI;TRAN QUANG HUNG;OH, SUN JONG;KIM, DONG YOUNG;MIGAKU TAKAHASHI
分类号 G01R15/20;G01R33/02 主分类号 G01R15/20
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