| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress poor connection of wires. <P>SOLUTION: The semiconductor device comprises: a semiconductor element provided with a first electrode and a second electrode; a metal electrode plate 8 fixed to a substrate so that the front face of the metal electrode plate 8 is exposed on the substrate and the first electrode of the semiconductor element is joined to the front face; a through passage 81 formed on the metal electrode plate 8 with one end opening on the front face of the metal electrode plate 8 and with another end opening on a back face of the metal electrode plate 8; a terminal block 4 for holding a signal terminal 5, disposed on the substrate so that a part of the terminal block 4 is in contact with the front face of the metal electrode plate 8; an internal passage 43 formed on the terminal block 4 with one end opening on a contact face 41a with the front face of the metal electrode plate 8 and connected to the through passage 81 and with another end opening on a predetermined face 42a other than the contact face 41a; a wire for connecting the signal terminal 5 with the second electrode of the semiconductor element; and a mold member 7 integrated with the metal electrode plate 8 and the terminal block 4 when the through passage 81 and the internal passage 43 are fulfilled with resin by molding. <P>COPYRIGHT: (C)2012,JPO&INPIT |
