| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid state image sensor in which pixel characteristics of the solid state image sensor can be improved while reducing manufacturing cost. <P>SOLUTION: When a solid state image sensor is manufactured, a step for forming a first conductivity type impurity region 11 in a semiconductor substrate 1 by ion implantation using the same mask and then forming a second conductivity type second impurity region 6 on the first conductivity type impurity region 11, a step for forming a transfer gate 9 constituting a charge transfer part on the surface of the semiconductor substrate 1 extending over the second conductivity type second impurity region 6, a step for forming a first conductivity type charge storage region 5 constituting a sensor part in the semiconductor substrate 1 by ion implantation, and a step for forming a second conductivity type first impurity region 7 having an impurity concentration higher than that of the second conductivity type second impurity region 6 on the surface of the semiconductor substrate 1 in the sensor part by ion implantation are performed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
