| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology on a semiconductor device formed of a plurality of layered structures each having a semiconductor element for preventing occurence of heat load on a lower layer structure caused by laser beams used in a processing step of forming an upper layer structure. <P>SOLUTION: In a phase change memory including a plurality of layered memory matrix, a metallic film 19 is provided between a lower layer memory matrix and an upper layer memory matrix formed on the lower layer memory matrix. Laser beams used for forming the upper layer memory matrix are reflected by the metallic film 19, and the laser beams are prevented from transmitting through the metallic film 19. Consequently, a phase change material layer 16 in the lower layer memory matrix is prevented from being directly heated by the laser beams. <P>COPYRIGHT: (C)2012,JPO&INPIT |
