A method of fabricating an integrated inductor device includes providing a silicon substrate and forming a thickness of an insulating layer overlying the silicon substrate. The insulating layer includes a dummy structure within a portion of the thickness. The method includes forming an inductor having a first portion and a second portion. The first portion includes a spiral coil of conductor lines. The method also includes exposing the dummy structure by forming an opening in the insulating layer and removing the dummy structure to form a cavity underlying the inductor to reduce a dielectric constant and to increase a Q value of the inductor. The method includes using aluminum or copper for the dummy structures. The method includes dry etching the insulator and wet etching the dummy structure. The method also includes forming the inductors using aluminum or copper.
申请公布号
US2011304013(A1)
申请公布日期
2011.12.15
申请号
US20100953426
申请日期
2010.11.23
申请人
CHEN ZHEN;LIN YUNG FENG;HUANG LIN;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION