发明名称 MEMORY CELL SUPPLY VOLTAGE CONTROL BASED ON ERROR DETECTION
摘要 For one disclosed embodiment, an apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error. Other embodiments are also disclosed.
申请公布号 US2011307761(A1) 申请公布日期 2011.12.15
申请号 US201113215949 申请日期 2011.08.23
申请人 MUHAMMAD KHELLAH;SOMASEKHAR DINESH;YE YIBIN;KIM NAM SUNG;DE VIVEK;INTEL CORPORATION 发明人 MUHAMMAD KHELLAH;SOMASEKHAR DINESH;YE YIBIN;KIM NAM SUNG;DE VIVEK
分类号 G11C29/00 主分类号 G11C29/00
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