发明名称 |
NONVOLATILE MEMORY DEVICE |
摘要 |
A nonvolatile memory device having a three-dimensional structure includes first word line stacks in which first word lines are stacked; second word line stacks in which second word lines parallel to the first word lines are stacked; first connection lines connecting the first word lines; and second connection lines connecting the second word lines. Each of the first connection lines connects the first word lines located at a common layer, each of the second connection lines connects the second word lines located at a common layer and at least one second word line stack is disposed between a pair of the first word line stacks. |
申请公布号 |
US2011305083(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113217627 |
申请日期 |
2011.08.25 |
申请人 |
SHIM SUNIL;HUR SUNGHOI;JANG YOUNGGOAN;KIM JINHO;YI SU-YOUN;MOON HUICHANG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM SUNIL;HUR SUNGHOI;JANG YOUNGGOAN;KIM JINHO;YI SU-YOUN;MOON HUICHANG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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