发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH DIFFERENTIALLY NITRIDED GATE INSULATORS |
摘要 |
An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively. |
申请公布号 |
US2011306171(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US201113105652 |
申请日期 |
2011.05.11 |
申请人 |
LIM HA-JIN;DO JIN-HO;KIM WEON-HONG;SONG MOON-KYUN;JOO DAE-KWON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM HA-JIN;DO JIN-HO;KIM WEON-HONG;SONG MOON-KYUN;JOO DAE-KWON |
分类号 |
H01L21/8238;H01L21/28 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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