发明名称 Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device
摘要 After a liquid chemical treatment is finished, in parallel with a washing away treatment and/or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.
申请公布号 US2011303248(A1) 申请公布日期 2011.12.15
申请号 US201113217604 申请日期 2011.08.25
申请人 OSHIMA TADASHI;FUJITSU SEMICONDUCTOR LIMITED 发明人 OSHIMA TADASHI
分类号 B08B3/02 主分类号 B08B3/02
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