发明名称 |
WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE |
摘要 |
A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.
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申请公布号 |
US2011305066(A1) |
申请公布日期 |
2011.12.15 |
申请号 |
US20100815369 |
申请日期 |
2010.06.14 |
申请人 |
NAZARIAN HAGOP;JO SUNG HYUN;CROSSBAR, INC. |
发明人 |
NAZARIAN HAGOP;JO SUNG HYUN |
分类号 |
G11C11/00;G01R31/28 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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