| 摘要 |
<p>In a silicon-based thin film depositing apparatus 10, a plurality of transparent electrodes 62 are disposed so as to face the corresponding counter electrodes 16 with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices 14a toward the supporting electrodes 18 and also injecting a barrier gas from barrier gas injection orifices 15a in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet 13, and thereby, the pressure in a chamber 12 is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode 16 to deposit a silicon-based thin film. In this method, a DC pulse voltage is applied to perform discharge as described above. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved. Furthermore, by injecting the barrier gas so as to surround the raw material gas, when a carrier gas is mixed with the raw material gas, the flow rate of the carrier gas can be decreased.
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