| 摘要 |
<p>A MONOS memory transistor capable of high speed write with a small current and superior in scaling, comprised of substrate (well W), a channel forming region, a first and a second impurity regions SBLi, SBLi+1 comprised of an opposite conductivity type semiconductor and sandwiching the channel forming region between them and acting as a source and a drain in operation, gate insulating films 10a, 10b, 14 and gate electrode WL on the channel forming region, and a charge storing means (carrier trap) which is formed in the gate insulating films 10a and 10b and dispersed in the plane facing the channel forming region and in the direction of thickness and is injected with hot holes caused by a band-to-band tunnel current from the impurity regions SLi or SLi+1 in operation.</p> |
