| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve accuracy of analysis about a cell junction area by protecting a monitoring junction area through a spacer. CONSTITUTION: Gate lines(DSL,WL) are formed on the upper side of a die area in order to be crossed with element isolation films. Dummy gate lines(DL) are formed on the upper side of a monitoring area side by side with the element isolation films. Junction areas(M1,M2) are separated by leaving the gate lines in interval. Monitoring junction areas are formed between element isolation films side by side with the dummy gate lines. A spacer(121) secludes at least one among monitoring junction areas. The gate lines and the dummy gate lines are formed in each sidewall. First contact plugs are formed in both upper ends of a first monitoring junction area and are connected to the first monitoring junction area.</p> |
