| 摘要 |
<p>PURPOSE: The pattern formation method of a semiconductor device is provided to prevent the generation of polymer due to a sub pattern by eliminating the sub pattern which remains before etching a hard mask layer. CONSTITUTION: Sub patterns are formed to be separated on the upper side of a first sub-layer(121). A spacer is formed on each side wall of first and second isolation patterns(119a1,119a2). The sub patterns are eliminated and an exposed domain of the first and second isolation patterns is eliminated. Hard mask patterns are formed by eliminating a domain in which the first and second isolation patterns remain and a hard mask film. First patterns and second patterns are respectively formed in a first domain and a second domain by eliminating a material layer(111) for pattern.</p> |
