| 摘要 |
A substrate holding structure includes a wafer stage having a first main surface and a second main surface opposite to the first main surface. A substrate placing area is defined on the first main surface. The substrate holding structure further includes a static capacity measurement electrode having a center circular electrode and at least one circular ring electrode for measuring a combined capacity among a substrate to be placed in the substrate placing area, the center circular electrode, and the circular ring electrode; at least one temperature measurement unit; an electrode control unit connected to the center circular electrode and the circular ring electrode; a temperature control unit connected to the temperature measurement unit and the temperature adjustment unit; a storage unit; a calculation unit connected to the storage unit; and a control unit connected to the electrode control unit and the temperature control unit. |
