| 摘要 |
<p>PURPOSE: A device for manufacturing a CuInGaSe layer and a method thereof are provided to form a CuInGaSe layer with an exact composition ratio by a physical vapor deposition method or a chemical vapor deposition method. CONSTITUTION: A CuInGaSe material source(150) is arranged on the bottom of a vacuum chamber(110). A substrate(140) is arranged on the top of the vacuum chamber. An electronic gun(120) scans an electronic beam to the CuInGaSe material source. A magnetic field generating device is arranged between the electronic gun and the CuInGaSe material source. A shutter(113) blocks an evaporation route to the substrate. The shutter is installed on the top of the CuInGaSe material source.</p> |
