| 摘要 |
<p>PURPOSE: A device for manufacturing a CuInGaSe layer and a method thereof are provided to form a CuInGaSe layer under 1000°C, thereby drastically reducing manufacturing costs by eliminating an expensive temperature adjusting device. CONSTITUTION: A solid CuInGaSe material source and a substrate(140) are arranged on a reaction tube(110). A gas supply unit(120) includes a hydrogen chloride supply unit and a nitrogen supply unit. A temperature adjusting unit(130) adjusts the temperatures of the CuInGaSe material source and the substrate respectively. The temperature is controlled at a first temperature in a first area by the temperature adjusting unit. The temperature is controlled at a second temperature in a second area(112) by the temperature adjusting unit.</p> |
