发明名称 METHOD FOR PRODUCING OXIDE THIN FILM TRANSISTOR ARRAY SUBSTRATES AND ORGANIC EL DISPLAY DEVICES
摘要 <p>PURPOSE: A method for manufacturing an oxide thin film transistor array substrate and an organic EL display device is provided to apply a gate voltage to the gate electrode of each oxide thin film transistor, thereby reducing shift of a threshold voltage of an oxide thin film transistor. CONSTITUTION: A plurality of pixel circuits(11) is arranged on an active matrix substrate(10). The active matrix substrate comprises a plurality of data lines(14) and a plurality of gate scanning lines(15). A scanning driving circuit(12) outputs a gate scan signal to the pixel circuits. A gate driving circuit(13) outputs a program voltage to a transistor for driving the pixel circuits. A driving transistor and a transistor for selecting a gate are made of N type oxide thin film transistors.</p>
申请公布号 KR20110134321(A) 申请公布日期 2011.12.14
申请号 KR20110054778 申请日期 2011.06.07
申请人 FUJIFILM CORPORATION 发明人 IMAI SHINJI
分类号 H01L51/56;G09G3/30;H01L29/786;H01L51/50 主分类号 H01L51/56
代理机构 代理人
主权项
地址