METHOD OF FORMING A PHOTORESIST PATTERN

摘要

PURPOSE: A method for forming a photoresist pattern is provided to perform light exposing and developing processes twice under the same conditions, thereby readjusting processing conditions. CONSTITUTION: A mask film(104) is coated on a substrate(100) on which a target film(102) to be etched is formed. A reflection preventing film(110) is coated on the mask film. The reflection preventing film is made of organic and inorganic materials to prevent diffused reflection during a light exposure process. The reflection preventing film includes an inorganic reflection preventing film(106) and an organic reflection preventing film(108). A first photoresist film is coated on the reflection preventing film to form a reserved first photoresist pattern.