发明名称
摘要 In a method of manufacturing a semiconductor device, a semiconductor wafer is provided. The wafer has semiconductor chip regions, a scribing line region and a predetermined region. A passivation layer is formed on the wafer. A photoresist film is formed on the passivation layer. A first pattern in a reticle is transferred to a first portion of the photoresist film above the scribing line region. The first pattern is transferred to a second portion of the photoresist film above the predetermined region. The photoresist film is developed. The passivation layer is etched using the photoresist film as a mask. The wafer is diced along the scribing line region to form semiconductor chips and a piece. Each of the semiconductor chips corresponds to each of chip regions. The piece group includes a piece which corresponds to the predetermined region.
申请公布号 JP4837971(B2) 申请公布日期 2011.12.14
申请号 JP20050294926 申请日期 2005.10.07
申请人 发明人
分类号 H01L21/027;H01L21/02 主分类号 H01L21/027
代理机构 代理人
主权项
地址
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