发明名称 |
Silicon-on-insulator structure |
摘要 |
<p>A silicon on insulator structure (SOI) comprising a base silicon layer, a silicon substrate and an insulating layer between the base silicon layer and the silicon substrate; and an active device formed in the silicon substrate, which active device comprises an active area, the structure further comprising a thermal conductor extending from the active area to the base silicon layer.</p> |
申请公布号 |
EP2395548(A1) |
申请公布日期 |
2011.12.14 |
申请号 |
EP20100251057 |
申请日期 |
2010.06.08 |
申请人 |
NXP B.V. |
发明人 |
BOEZEN, HENK;KOOPS, GERHARD;GOLUBOVIC, DUSAN;KRABBENBORG, BENNO;SWANENBERG, MAARTEN JACOBUS |
分类号 |
H01L23/367 |
主分类号 |
H01L23/367 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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