发明名称 Silicon-on-insulator structure
摘要 <p>A silicon on insulator structure (SOI) comprising a base silicon layer, a silicon substrate and an insulating layer between the base silicon layer and the silicon substrate; and an active device formed in the silicon substrate, which active device comprises an active area, the structure further comprising a thermal conductor extending from the active area to the base silicon layer.</p>
申请公布号 EP2395548(A1) 申请公布日期 2011.12.14
申请号 EP20100251057 申请日期 2010.06.08
申请人 NXP B.V. 发明人 BOEZEN, HENK;KOOPS, GERHARD;GOLUBOVIC, DUSAN;KRABBENBORG, BENNO;SWANENBERG, MAARTEN JACOBUS
分类号 H01L23/367 主分类号 H01L23/367
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