| 摘要 |
A charge storage circuit for a pixel comprises a charge storage node 12. First and second series-connected transistors 8 and 10 are provided for selectively isolating the charge storage node from a first voltage input 9 SL for supplying a data voltage. The circuit is provided with a voltage follower circuit for reducing leakage current through the second transistor 10, with the first transistor 8 forming part of the voltage follower circuit. By "re-using" one of the isolation transistors as part of the voltage follower, the number of additional components that must be provided for the voltage follower and the area occupied by the voltage follower are reduced. |
