| 发明名称 |
Correcting for over programming non-volatile storage |
| 摘要 |
A non-volatile storage system corrects over programed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line). |
| 申请公布号 |
US8077524(B2) |
申请公布日期 |
2011.12.13 |
| 申请号 |
US201113152252 |
申请日期 |
2011.06.02 |
| 申请人 |
LUTZE JEFFREY W.;LI YAN;SANDISK TECHNOLOGIES INC. |
发明人 |
LUTZE JEFFREY W.;LI YAN |
| 分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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| 地址 |
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