发明名称 |
Method and apparatus for programming a multi-level memory |
摘要 |
A method of programming a memory device comprising a plurality of memory cells may include verifying a first memory cell targeted to a first level with a first preliminary voltage of a first program phase (PPV1′), programming the first memory cell targeted to the first level in the first program phase, and verifying the first memory cell with a first post program-verify voltage of the first program phase (PV1′) in which the first post program-verify voltage is different from the first preliminary voltage. A corresponding apparatus is also provided. |
申请公布号 |
US8077513(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20090566144 |
申请日期 |
2009.09.24 |
申请人 |
HO HSIN-YI;LI CHIA-CHING;HUNG CHUN-HSIUNG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO HSIN-YI;LI CHIA-CHING;HUNG CHUN-HSIUNG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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