| 发明名称 |
Low noise transistor and method of making same |
| 摘要 |
A low noise transistor and a method of making a low noise transistor. A noise-reducing agent is introduced into the gate electrode and then moved into the gate dielectric of a transistor. |
| 申请公布号 |
US8076228(B2) |
申请公布日期 |
2011.12.13 |
| 申请号 |
US20070699202 |
申请日期 |
2007.01.29 |
| 申请人 |
BERTHOLD ADRIAN;BIANCO MICHAEL;MAHNKOPF REINHARD;INFINEON TECHNOLOGIES AG |
发明人 |
BERTHOLD ADRIAN;BIANCO MICHAEL;MAHNKOPF REINHARD |
| 分类号 |
H01L21/38;H01L21/00 |
主分类号 |
H01L21/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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