发明名称 |
Upper layer-forming composition and photoresist patterning method |
摘要 |
An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon. |
申请公布号 |
US8076053(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20060091712 |
申请日期 |
2006.10.25 |
申请人 |
NAKAMURA ATSUSHI;NAKAGAWA HIROKI;NAKASHIMA HIROMITSU;TSUJI TAKAYUKI;DOUGAUCHI HIROSHI;KOUNO DAITA;NISHIMURA YUKIO;JSR CORPORATION |
发明人 |
NAKAMURA ATSUSHI;NAKAGAWA HIROKI;NAKASHIMA HIROMITSU;TSUJI TAKAYUKI;DOUGAUCHI HIROSHI;KOUNO DAITA;NISHIMURA YUKIO |
分类号 |
G03F7/00;G03F7/004;G03F7/11;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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