发明名称 |
Nitride semiconductor device having current confining layer |
摘要 |
A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer. |
申请公布号 |
US8076685(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20090556946 |
申请日期 |
2009.09.10 |
申请人 |
TAMURA SATOSHI;KAJITANI RYO;PANASONIC CORPORATION |
发明人 |
TAMURA SATOSHI;KAJITANI RYO |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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