发明名称 |
LASER PROCESSING APPARATUS |
摘要 |
<p>It is possible to preferably form a gas atmosphere of a laser irradiation portion of a work in a laser processing unit. The laser processing unit processes the work by applying a laser light (3) to the work (amorphous semiconductor thin film (10)) while performing relative scanning. The laser processing device includes: a gas injection unit (a laser light application/gas injection opening (8)) for injecting a gas which forms an irradiation atmosphere in the vicinity of the laser irradiation portion of the work; and rectification planes (rectification plates (7a, 7b)) which extend along the scan direction from the vicinity of the gas injection portion while keeping a distance from the work surface. Thus, it is possible to form a gas atmosphere in a wide range along the scan direction and effectively perform laser processing such as anneal by using the preferable gas atmosphere upon laser application.</p> |
申请公布号 |
KR20110133612(A) |
申请公布日期 |
2011.12.13 |
申请号 |
KR20117024776 |
申请日期 |
2008.05.14 |
申请人 |
THE JAPAN STEEL WORKS, LTD. |
发明人 |
MACHIDA MASASHI;SAWAI MIKI;NAKADA YUICHI;SAZUKA HIROTAKA |
分类号 |
H01L21/268;H01L21/324 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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