发明名称 LASER PROCESSING APPARATUS
摘要 <p>It is possible to preferably form a gas atmosphere of a laser irradiation portion of a work in a laser processing unit. The laser processing unit processes the work by applying a laser light (3) to the work (amorphous semiconductor thin film (10)) while performing relative scanning. The laser processing device includes: a gas injection unit (a laser light application/gas injection opening (8)) for injecting a gas which forms an irradiation atmosphere in the vicinity of the laser irradiation portion of the work; and rectification planes (rectification plates (7a, 7b)) which extend along the scan direction from the vicinity of the gas injection portion while keeping a distance from the work surface. Thus, it is possible to form a gas atmosphere in a wide range along the scan direction and effectively perform laser processing such as anneal by using the preferable gas atmosphere upon laser application.</p>
申请公布号 KR20110133612(A) 申请公布日期 2011.12.13
申请号 KR20117024776 申请日期 2008.05.14
申请人 THE JAPAN STEEL WORKS, LTD. 发明人 MACHIDA MASASHI;SAWAI MIKI;NAKADA YUICHI;SAZUKA HIROTAKA
分类号 H01L21/268;H01L21/324 主分类号 H01L21/268
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