| 摘要 |
The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film therebetween; and a diode having a diode electrode made of the second conductive film and a second interface film as a silicon oxide film formed at the interface between the diode electrode and a substrate. The first interface film has a thickness with which electrical connection between the lower electrode and the upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited. |
