发明名称 |
Method of fabricating metal oxide semiconductor transistor |
摘要 |
A method of fabricating a MOS transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming at least a gate on the semiconductor substrate; forming a protective layer on the semiconductor substrate, and the protective layer covering the surface of the gate; forming at least a recess within the semiconductor substrate adjacent to the gate; forming an epitaxial layer in the recess, wherein the top surface of the epitaxial layer is above the surface of the semiconductor substrate; and forming a spacer on the sidewall of the gate and on a portion of the epitaxial layer, wherein a contact surface of the epitaxial layer and the spacer is above the surface of the semiconductor substrate. |
申请公布号 |
US8076194(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20100781826 |
申请日期 |
2010.05.18 |
申请人 |
TSENG CHU-YIN;HSU SHIH-CHIEH;WU CHIH-CHIANG;TING SHYH-FANN;CHENG PO-LUN;CHEN HSUAN-HSU;UNITED MICROELECTRONICS CORP. |
发明人 |
TSENG CHU-YIN;HSU SHIH-CHIEH;WU CHIH-CHIANG;TING SHYH-FANN;CHENG PO-LUN;CHEN HSUAN-HSU |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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