发明名称 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION
摘要 <p>A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.</p>
申请公布号 KR20110133595(A) 申请公布日期 2011.12.13
申请号 KR20117023292 申请日期 2010.03.02
申请人 QUALCOMM INCORPORATED 发明人 LEE, KANG HO;ZHU XIAOCHUN;LI XIA;KANG, SEUNG H.
分类号 H01L43/08;H01F10/32;H01L43/12 主分类号 H01L43/08
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