发明名称 Substrate structure and manufacturing method of the same
摘要 After a titanium nitride (TiN) thin film is formed on a silicon substrate, cobalt (Co) fine particles and nickel (Ni) fine particles are deposited in a mixed state on the titanium nitride (TiN) thin film, and CNTs are sequentially grown from the cobalt (Co) fine particles and the nickel fine particles by varying growth conditions.
申请公布号 US8076260(B2) 申请公布日期 2011.12.13
申请号 US20080098724 申请日期 2008.04.07
申请人 KONDO DAIYU;FUJITSU SEMICONDUCTOR LIMITED 发明人 KONDO DAIYU
分类号 B01J21/18;B01J23/40;B01J23/74;H01L23/48;H01L23/52;H01L29/40 主分类号 B01J21/18
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