发明名称 |
Substrate structure and manufacturing method of the same |
摘要 |
After a titanium nitride (TiN) thin film is formed on a silicon substrate, cobalt (Co) fine particles and nickel (Ni) fine particles are deposited in a mixed state on the titanium nitride (TiN) thin film, and CNTs are sequentially grown from the cobalt (Co) fine particles and the nickel fine particles by varying growth conditions. |
申请公布号 |
US8076260(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20080098724 |
申请日期 |
2008.04.07 |
申请人 |
KONDO DAIYU;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
KONDO DAIYU |
分类号 |
B01J21/18;B01J23/40;B01J23/74;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
B01J21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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