PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD

摘要

PURPOSE: A pattern forming method, a resist composition for multiple development used in the pattern forming method, a developer for negative development used in the pattern forming method, and a rinsing solution for negative development used in the pattern forming method are provided to obtain superior dissolution contrast and sensitivity by radiating extreme ultraviolet ray. CONSTITUTION: A pattern forming method includes the following: A positive resist composition is applied on a substrate to form a resist layer. The solubility of the positive resist composition increases in a positive developing solution and decreases in a negative developing solution according to the irradiation of active ray or ultraviolet ray. The resist layer is exposed and is developed using a negative developing solution containing an organic solvent. The developing solution is represented by chemical formula 1 or 2.